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We demonstrate MOS-structure silicon solar-cells using a biasing antireflective-ITO-electrode to enhance the photovoltaic performance. The enhancement of the short-circuit-current and conversion-efficiency was confirmed by the light-current-voltage and induced-junction-capacitance measurements when applied 0–2.5 V-biasing on ITO-electrode.
We demonstrate the enhanced performances of Si-solar-cells using the spin-on-film device-processes and Indium-nanoparticle plasmonics. The short-circuit-current of the cell with indium-nanoparticles-plasmonics increase by 56.03% (from 3.48 to 5.43 mA) is obtained, compared to the bare-solar-cell.
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