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FinFET devices achieving N/P Ion values of 1250/950 uA/um at 100nA/um at 1V, 1300/1000 uA/um with self-heating correction, are demonstrated, using a dual work function gate-first process flow at 100 nm gate pitch and 40 nm fin pitch. Ring-oscillator (RO, FO=3) functionality has been demonstrated, showing excellent Vdd scalability. We have also demonstrated logic scan chain functionality and yield...
After many experiments in developing fluxless Ag-In joints, we realize that the success of producing a joint relates to microstructure of the Ag layer. Ag with small grains results in rapid growth of solid Ag2In intermetallic compounds through grain boundary diffusion. Thus, a joint is not obtained because of lack of molten phase, (L). To coarsen Ag grains, an annealing step is added to the Ag-plated...
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