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Epitaxial NiSi2 source and drain with dopant segregation technique is applied to silicon nanowire (SNW) MOSFETs. Growth of epitaxial NiSi2 is characterized by self-limiting growth behavior and stability of (111) facets. These features realize the layout of junction edges in atomic-scale. Advantage of epitaxial NiSi2 growth technique is demonstrated by performances of SNW MOSFETs.
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