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This work reports the design of a GaAs monolithic K-band Doherty power amplifier for point-to-point microwave backhaul applications. The design of the module is described, from the choice of the architecture based on power budget and gain requirements, to the analysis of the solutions adopted. The MMIC is expected to achieve 32.5 dBm output power in the 20.8–24 GHz band, PAE higher than 32% at saturation...
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wide-band high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent...
An MMIC GaN Doherty power amplifier is presented. This amplifier, optimized for C-band Microwave Radio links, is designed to reach the maximum efficiency at the output power back-off level where the data distribution function of the modulated input signal has its maximum. The design approach was carried out through a careful investigation of load pull measurements at the fundamental and second harmonic,...
A core-chip for X-band applications with on board serial-to-parallel conversion implementing a separate architecture topology is presented. The main RF performances are 10dB gain at minimum attenuation, 0-360° phase coverage, 0-31.5dB gain setting in less than 15mm2, resulting in one of the smallest core chips realised in GaAs technology. The slight parasitic cross-effect between phase and gain setting...
The paper presents a discussion on the thermal design of integrated power GaN devices. After a short outline of some critical thermal modelling issues, design guidelines are proposed on the basis of thermal simulations; the results presented suggest that for room temperature applications SiC substrate thinning (thus implying a microstrip process) is not mandatory from a thermal standpoint. This would...
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