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Thanks to its wide bandgap, exceptionally high thermal conductivity and relatively high carrier velocities, diamond exhibits attractive semiconductor properties that make it an interesting candidate for high power, high frequency and high temperature solid-state microelectronic devices, able to withstand harsh environmental conditions (in terms of temperature and/or radiation). The development of...
The paper describes the fabrication process, the technology assessment and the experimental characterization of silver nanoparticle inkjet-printed microstrip structures on alumina substrates for RF and microwave applications. The present technology allows, through the adoption of innovative silver-based inks and a special piezoelectric-inkjet printer, the direct printing of microstrip prototypes on...
Design and characterization of a double-stub impedance tuner at 1.4 GHz, based on SiC varactors, fabricated at the Chalmers University, is presented. Preliminary studies are carried out to evaluate the capacitance range required to reach the desired impedance coverage, extending from 15 to 80Ω. Accurate optimization is then completed through RF CAD simulation adopting a reliable nonlinear varactor...
A core-chip for X-band applications with on board serial-to-parallel conversion implementing a separate architecture topology is presented. The main RF performances are 10dB gain at minimum attenuation, 0-360° phase coverage, 0-31.5dB gain setting in less than 15mm2, resulting in one of the smallest core chips realised in GaAs technology. The slight parasitic cross-effect between phase and gain setting...
Two high-efficiency power amplifiers have been designed, fabricated, and tested using a commercially available GaN HEMT transistor and a low-cost hybrid microstrip PCB. The designed hybrid modules are a “tuned load” Class B amplifier and a Class F amplifier. The simulated performances show a peak efficiency of 72 and 78 % with an output power of 5 and 4.5W respectively. The measured performance, although...
This paper proves that the traditional way of deriving power amplifier low-pass equivalent complex-signal Volterra models from their original band-pass RF real-signal Volterra models is too restrictive, and so does not lead to an optimal model. Then, it proposes a much richer alternative approach. Instead of deriving the base-band Volterra model from the RF Volterra model, we started by a general...
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