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The benefits of using source field plate (FPS) in AlGaN/GaN HEMTs to reduce the phase distortion in efficient power amplifiers (PAs) is demonstrated in this contribution. The link between phase distortion of a PA and the drain - to - gate feedback parasitic capacitance of the transistor is shown. This link leads to critical phase nonlinearity expecially when architectures based on output load modulation,...
The benefits of using source field plate (FPS) in AlGaN/GaN HEMTs to reduce the phase distortion in efficient power amplifiers (PAs) is demonstrated in this contribution. The link between phase distortion of a PA and the drain-to-gate feedback parasitic capacitance of the transistor is shown. This link leads to critical phase nonlinearity expecially when architectures based on output load modulation,...
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wide-band high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent...
Two high-efficiency power amplifiers have been designed, fabricated, and tested using a commercially available GaN HEMT transistor and a low-cost hybrid microstrip PCB. The designed hybrid modules are a “tuned load” Class B amplifier and a Class F amplifier. The simulated performances show a peak efficiency of 72 and 78 % with an output power of 5 and 4.5W respectively. The measured performance, although...
An extensive power characterization of devices fabricated on GaN grown on SiC and sapphire substrates has been carried out, including power sweep and load-pull measurements in different bias conditions from class A to class B. An active load-pull bench optimized for high voltage and high power measurements allows to extend the load-pull characterization to the whole Smith chart, and to localize the...
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