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The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "in-IC" integration. Modeling of Casimir force, design of accelerometers, improvement of hybrid e-beam/DUV lithography and FH-vapor release, development of specific AFM characterizations have allowed to fabricate NEMS devices and to provide AFM characterizations.
The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "In-IC" integration. The goal of this work is to demonstrate the feasibility in terms of concept and technological manufacturing. Modeling of Casimir force, development of hybrid e-beam/DUV lithography and FH-vapor release, specific AFM characterizations have allowed to design,...
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