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This paper presents a systematic study of the busbar design and optimization for SiC-based H-bridge power electronics building block (PEBB) used in high-frequency and high-power applications. Step-by-step guidelines are presented in which the design considerations and analysis are given. This paper presents a double-sided busbar concept to create a compact PEBB design with improved thermal and switching...
This paper presents an improved phase leg power loop design for enhance mode lateral structure Gallium Nitride (GaN) transistors. Static characterization results of a 650V/30A GaN transistor are presented to determine the design parameters of the gate driver circuits. The control of Common Mode (CM) noise current propagation is considered during the gate driver design by optimizing the power distribution...
This paper presents an improved phase leg power loop design for enhance mode lateral structure Gallium Nitride (GaN) transistors. Static characterization results of a 650V/30A GaN transistor are presented. The gate driver circuit is designed based on the characterization results. In order to reduce current commutation loop inductance within the GaN phase leg, an improved power loop design with vertical...
This paper discusses the design of a multichip Gallium-Nitride (GaN) power module for high frequency power conversion. The module is designed with HRL 600 V GalliumNitride (GaN) enhancement mode HEMT device. To exploit the capability of fast switching with low loss from high voltage GaN devices, different layout structures have been analyzed to reduce power loop parasitic inductance and improve switching...
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