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Photonic generation of microwave carriers by using a dual-frequency distributed feedback waveguide laser in ytterbium-doped aluminum oxide is demonstrated. A highperformance optical frequency locked loop is implemented to stabilize the microwave carrier. This approach results in a microwave frequency at ∼14 GHz with a phase noise of −75 dBc/Hz at 1 MHz offset from the center frequency. The frequency...
We demonstrate an integrated optical particle sensor based on a dual-wavelength distributed-feedback waveguide laser. Micro-particles were detected down to a size of 1 μm, which represents the typical size of many fungal and bacterial pathogens.
We demonstrate the optical generation of stable microwave signals from a dual-wavelength distributed-feedback waveguide laser in ytterbium-doped alumina. The microwave beat signal was produced at ∼15 GHz with a frequency stability of ±2.5 MHz.
Channel waveguides with high refractive-index contrast are fabricated in double tungstates. Yb3+ lasers with 71% slope efficiency and 418 mW output power are demonstrated. Tm3+ lasers at 1843 nm have also been demonstrated.
Reflection gratings on Al2O3 channel waveguides were defined by focused ion beam milling. Fabry-Perot microcavities were fabricated and improved performance upon annealing was demonstrated, making them viable candidates as resonators for on-chip waveguide lasers.
The paper reports the laser emission from an enhanced-index-contrast KYW waveguide fabricated by co-doping the active layer with Lu and Gd ions. Both, Lu3+ and Gd3+ possess higher electron densities than Y3+, thus increasing the refractive index. The emission wavelength varied from 1010 nm to 1040 nm, strongly depending on the alignment, which was probably caused by the etalon effects of the gaps...
Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths...
In this paper we experimentally compare pumping at 977 nm and 1480 nm and the influence on gain in an Al2O3:Er3+ amplifier. We show that significantly higher gain can be achieved when pumping at 977 nm, and a record-high peak gain and gain bandwidth obtains compared to previous results in this material. Al2O3:Er3+ straight channel waveguide amplifiers were fabricated on thermally-oxidized silicon...
Er concentration, energy-transfer upconversion and gain were investigated in Er-doped aluminum oxide channel waveguides. Net gain of up to 2.0 dB/cm was measured, demonstrating this material to provide a competitive active integrated optics technology.
We report the first waveguide laser based on rare-earth sesquioxides. A structured Nd(0.5%):(Gd, Lu)2O3 film pumped at 820 nm showed lasing at 1.08 mum. The laser threshold was 0.8 mW, the preliminary slope efficiency 0.5% and the maximum output power 1.8 mW.
Reactively co-sputtered aluminum oxide layers with low background loss and varying Er concentrations have been deposited. Net optical gain of 0.76 dB/cm was obtained for an Er concentration of 0.9times1020 cm-3 in a channel waveguide.
Using low-cost fabrication methods, liquid phase epitaxy and strip-loading a short fiber piece with a fluid, channel waveguide lasing is demonstrated in KY(WO4)2:Yb3+. Threshold is 82 mW, slope efficiency 30%, and output power 14 mW.
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