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In this paper, an integrated probe card is proposed and developed for wafer-level IC testing. Based on micromachining technology, totally about 26,000 cantilever-tip probes can be formed simultaneously in one 4-in. silicon wafer, with the minimum pitch of 35μm for adjacent probing tips. The probe card is designed with a novel composite structure that combines both single-crystalline silicon and electroplated...
Presented is a novel MEMS probe-card for wafer-level IC testing. In one 4-inch wafer, a total of 17300 cantilever-tip probes are fabricated, with 90 mum pitch for adjacent probes. Combined with the silicon cantilevers formed by advanced bulk micromachining techniques, the electroplated nickel is used to simultaneously form the probing tips and the through-wafer interconnects (TWIs). The TWIs are designed...
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