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This paper demonstrates how the linearity performance of a 10W GaN HEMT can be dramatically improved by actively engineering the baseband impedance environment around the device. An important refinement to existing active load-pull measurement capability is proposed that allows the precise and independent control of all significant baseband and RF components that result from the amplification of a...
This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics...
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