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This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics...
Results from a fully implemented class-J RFPA (RF power amplifier) are presented for the first time, which demonstrate this mode's high efficiency potential across a substantial bandwidth. Using a commercially available 10W GaN (gallium nitride) HEMT device, and the high power waveform measurement and active load-pull capability at Cardiff University, class-J operation has demonstrated drain efficiencies...
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