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International military forces are increasingly engaged in coalition-based operations with an expectation that future coalition forces will be tightly interoperable even down to the tactical level. At the same time, there is an emerging trend towards increasing connectivity at the tactical edge, with mobile ad hoc networking (MANET) seen as a key enabling technology for this improved connectivity....
This letter reports record RF performance of deeply scaled depletion-mode GaN-high-electron-mobility transistors (GaN-HEMTs). Based on double heterojunction AlN/GaN/AlGaN epitaxial structure, fully passivated devices were fabricated by self-aligned-gate technology featuring recessed $n^{+}$ -GaN ohmic contact regrown by molecular beam epitaxy. Record-high $f_{T}$ of 454 GHz and simultaneous $f_{{\rm {max}}}$ ...
Power switches based on GaN-on-Si transistor technology have the advantage of high switching speed and low fabrication cost. This paper reports our recent advancement in device technology which enabled nanosecond switching at one kilowatt, with an unprecedented slew rate of 325 V/ns. The high switching speed opens up pathways for emerging applications such as envelope tracking and wireless power charging.
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