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The detailed dynamic analysis of novel high-speed InP-based photodiodes (PDs) has been performed. Such device can sustain an invariable high external efficiency (∼74%; no antireflection coating) across a wide optical operation window (0.85 to 1.55 μm). Furthermore, compared with the traditional GaAs-based high-speed PD for optical interconnect applications, our proposed device structure can offer...
We demonstrate InP photodiodes with large diameter of optical window (40μm). They achieve high-speed (25 GHz) and high-responsivity (0.52A/W) at 0.85 μm wavelength. Error-free 40 Gbit/sec transmissions over 100 meter OM4 fiber have been achieved.
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