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In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET's body diode. The reverse recovery of SiC MOSFET's body diode is shown at different forward conduction currents,...
In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) high electron mobility transistor (HEMT) is proposed and validated under both static and switching conditions. A novel feature of this model is that it is valid also in the third quadrant, which is important when the device operates as a freewheeling diode. The only measurements required for the parameter...
A detailed parameter extraction procedure for a simple physics-based power silicon carbide (SiC) Schottky diode model is presented. The developed procedure includes the extraction of carrier concentration, active area, and thickness of the drift region, which are needed in the power Schottky diode model. The main advantage is that the developed procedure does not require any knowledge of device fabrication,...
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