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In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss. The proposed model identifies the switching waveform subintervals, and develops the analytical equations in each switching...
In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) high electron mobility transistor (HEMT) is proposed and validated under both static and switching conditions. A novel feature of this model is that it is valid also in the third quadrant, which is important when the device operates as a freewheeling diode. The only measurements required for the parameter...
A practical parameter extraction procedure for a power silicon carbide (SiC) junction field-effect transistor (JFET) is presented. The carrier mobility and carrier concentration are very important parameters, strongly affecting the device current capability and dynamic characteristics for a given design. When modeling JFETs, the values of these parameters are usually based on assumptions and given...
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