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High contact resistance (RC) at metal-Molybdenum disulfide (MoS2) interface obscures the intrinsic transport properties of MoS2 [1] and limits its potential as a channel material for future CMOS technology. In this work, we report reduction in the effective Schottky barrier height (SBH) and contact resistance at the metal-MoS2 interface using an ultra-thin TiO2 interfacial layer (IL) resulting in...
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