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This paper analyzes some of the secondary effects in estimating negative bias temperature instability (NBTI) induced threshold voltage shift on high frequency digital circuits. Therefore, a circuit model is developed to be used for statistical estimation of the threshold voltage shift. Making use of this model as well as technology computer aided design (TCAD) and SPICE simulations, a methodology...
In this paper, the potential of Silicon-Germanium (SiGe) technology for VLSI logic applications is investigated from a circuit perspective for the first time. The study is based on experimental measurements on 45-nm SiGe pMOSFETs with a high- /metal gate stack, as well as on 45-nm Si pMOSFETs with identical gate stack for comparison. In the reference SiGe technology, an innovative technological...
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