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Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing (RTF). Since abnormal resistance values were observed during the contact resistance testing, the surface morphology and contact borders of the samples were analyzed to determine the physical mechanism. Such abnormal phenomenon is found to originate from cracking...
Reeves’s CTLM was reviewed and its scope of application to extract specific contact resistance ρ c was discussed theoretically. Using the same pattern provided by Reeves, the theoretical results with different ρ c were calculated, which show that if the transfer length was small enough, the measurement of the contact end resistance R E measurement was unreliable resulting in...
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