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In this paper, TriGate nanowire (TGNW) FETs with high-κ/metal gate are studied as an alternative way to planar devices for the future CMOS technological nodes (14nm and beyond). The influence of Si film thickness (H) and nanowire width (W) on electrical performance of long- and short-channel devices are presented and discussed. We show that the transport properties in our TGNW are fully governed by...
In this paper, Tri-Gate Nanowire (TGNW) FETs with high-k/metal gate are studied as an alternative way to planar devices for the future CMOS technological nodes (14nm and beyond). The influence of Si film thickness (H) and nanowire width (W) on electrical performances of long- and short-channel devices are presented and discussed. We show that the transport properties in our TGNW are fully governed...
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