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This paper reports design, fabrication and measurements of a wideband amplifier for UHF applications. A technology based on Gallium Nitride (GaN) transistor is used to design a class- AB amplifier with compact dimensions which can be employed as a driver stage for many UHF applications with wideband requirements. Wideband impedance transformers at input and output of the amplifier are implemented...
This paper presents the designing and implementation of Si based GaN HEMTclass-AB boaster amplifier using S-parameters (S2P file) as well as its non-linear model at 2.3 GHz. The aim of this workis topropose an alternative designing approach using S-parameters (S2P file) in the absence of its nonlinear model. The fabricated booster amplifier give 34.5dBm output power, 15 dB gain and 50.27 % Power added...
Applying relaying concept to a universal mobile telecommunications system (UMTS) mobile network is not a new idea, and many systems employing relaying capabilities have been suggested. The power control (PC), which is an important aspect of UMTS, can be applied in such a mobile system, either in a centralised or a distributed fashion. An increase in the system capacity is expected, when utilised in...
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