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The constant-voltage electrical stress and 10-keV x-ray irradiation responses of encapsulated graphene-hBN devices are evaluated. Both constant-voltage stress and x-ray exposure induce only modest shifts in the current and the Dirac point of the graphene. Charge trapping at or near the graphene/BN interface is observed after x-ray irradiation. The experimental results suggest that net hole trapping...
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