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Transistor aging, due to Bias-Temperature Instability (BTI) is a serious concern in Static Random Access Memories (SRAMs). Under BTI stress an SRAM cell becomes increasingly skewed, which in turn affects its performance characteristics and consequently the memory reliability. In this paper, a variation tolerant technique for the periodic monitoring of the BTI influence on SRAM cells is presented....
The test complexity of high density DRAMs increases with technology evolution, due to a larger impact of process variation and weak defects. In particular, resistive open defects turn to be a major concern in DRAMs. Our analysis and simulation results show that an important phenomenon exists, charge accumulation, which is currently not considered in DRAM testing. Charge accumulation occurs in DRAM...
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