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A GaN high electron mobility transistor technology with a gate length of 0.25 µm has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5–3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5...
A GaN high electron mobility transistor technology with a gate length of 0.25 µm has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5–3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5...
A Ka-band hybrid 0/180 phase switch working at cryogenic temperature is presented. The circuit is designed on an alumina substrate using uniplanar hybrid technology, combining air-bridged coplanar waveguides and slotlines. Schottky diodes are used as switching elements, taking advantage of their cryogenic behavior, with low equivalent series resistance and low capacitance. Cryogenic performance...
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