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In this paper, electrically pumped III–V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror are reported. There are three key features for the device demonstrated: (i) The metal-coated etched-mirror ensures that the lasers can be used as on-chip light source and provides high reflectance, but requires no additional fabrication steps due to our process design, (ii) the bonded III–V...
A novel low temperature wafer-level Cu-Cu bonding method using Ag nanoparticles (NP) was proposed and realized in this paper. A bonding structure consisted of Cu bonding pads, TiW barrier/adhesive layer was firstly fabricated on the silicon wafer. Ag NPs were then deposited by physical vapor deposition (PVD) on Cu pads. The morphology of Ag NPs annealed at different temperature was studied. Bonding...
Copper chemical mechanical polishing (CMP) and wafer thinning technologies have been challenges for Through Silicon Via (TSV) interconnect in recent years. In this work, copper CMP slurry and process and wafer level thinning with temporary bonding were studied in detail. The concentration of peroxide (H2O2), citric acid, SiO2 particle and Benzotriazole (BTA) in the CMP slurry and their effects were...
Nowadays, three-dimensional (3D) integration has been widely applied in semiconductor and electronics industry. When 3D integration applied in MEMS (micro electromechanical system) packaging, it is possible to stack host MEMS chip/wafer with other chips/wafers (such as ASIC) to lower package profile and realize area array sensor system. In this paper, a miniaturized piezoresistive pressure sensor...
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