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Monolithic integration of NEMS-CMOS for a mechanically flip-flopped fin memory transistor is demonstrated via full CMOS process technology. An independent-gate (IG) FinFET is employed for CMOS logic, and a fin flip-flop actuated channel is used for NEMS memory. As the fin is actuated between the flip-flopped states, the proposed NEMS memory is referred to as a Fin Flip-flop Actuated Channel Transistor...
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