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Cubic GaInN/GaN multi-quantum wells (MQWs) are grown on V-grooved Si {100} substrates. The crystal phase is confirmed by electron-back scatter diffraction and cathodoluminescence shows room temperature MQW peak emission at 498 nm.
A metal photonic crystal integrated on the n+-doped top contact layer of an InAs quantum-dot infrared photodetector is investigated. The contact layer thickness impacts the photoresponse by the leaky mode characteristics of this antiguide structure.
Second harmonic generation (SHG) based on the enhancement of the local fields of nanoscale periodic, GaAs-filled holes in a metal film is presented. The highest SHG conversion efficiency achieved was 10−5 at 8 GW/cm2 input peak power, limited by multi-photon absorption and the resultant free-carrier absorption.
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