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We have developed compact, cost-effective transistor-outline (TO)-CAN modules based on a 1.3-/1.55-μm InGaAlAs electroabsorption modulator integrated with a distributed feedback laser (EML), and realized the 40-Gb/s operation of these modules for the first time. We propose a new method for connecting a straight RF substrate and a TO-CAN stem that minimizes the air gap between them, and that suppresses...
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