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We investigated hot phonons based on Stokes Raman scattering from a GaN/AlN high electron mobility transistor. Such a simple method is advantageous compared with the method based on Stokes and anti-Stokes Raman scattering.
We implemented single-photon detector in 1500-nm band based on frequency up-conversion in nonlinear waveguide at pump wavelength of 1920 nm. Ultralow dark count rate and signal photon detection rate are 20 s−1 and 56.8 s−1.
Anti-Stokes photoluminescence (ASPL) of n-type GaN is observed at room temperature. By studying behaviors of ASPL, the mechanism is identified as phonon-assisted bandtail photoluminescence. Such a process results in laser cooling.
By mixing three nearly-even-spaced optical frequencies generated by coupled optical parametric oscillators based in KTP stacks and bulk KTP in a nonlinear medium, we demonstrate coherent interference of THz waves.
By mixing three optical frequencies generated by an optical parametric oscillator under a novel configuration based in nonlinear crystals, multiple THz frequencies are efficiently generated. They can be used to pursue variety of novel applications.
We have implemented a single-photon detector in the 1500-nm band based on frequency up-conversion in a MgO-doped periodically-poled LiNbO3 waveguide, with a record-low dark count rate and a record-low detectable signal photon rate.
MgO-doped periodically-poled LiNbO3 waveguide is used to up-convert photons at 1.535–1.568 μm to those at 598–603 nm, which can be detected by avalanche photodetector at single-photon counting level. Conversion efficiencies up to 45% are achieved.
We have demonstrated that frequency upconversion in periodically-poled LiNbO3 is capable of reaching single-photon sensitivities for detections at 1.27 μm and 1.57 μm at room temperature.
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
We demonstrate that THz radiation beams generated by an array of the randomly-distributed InN nanopyramids can be used to enhance the THz output power by two orders of magnitude due to strong constructive interference.
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
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