The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High‐entropy oxides (HEOs) are promising anode materials for lithium‐ion batteries (LIBs), owing to their stable crystal structure, superionic conductivity, and high capacity. In this study, the (Cr, Mn, Fe, Co, and Ni)3O4 HEO via solid‐state reaction is prepared. To improve the synthetic efficiency, it is necessary to understand the formation mechanism. Therefore, a high‐resolution transmission electron...
Resistive Switching
In article number 2302979, Wen‐Wei Wu and co‐workers systematically investigate the resistive‐switching performance and mechanisms of high‐entropy oxide (HEO)‐based memristors. The SET/RESET behavior is induced by the migration of oxygen ions, leading to a structural transformation between spinel and rock salt. This novel high‐performance resistive random‐access memory (RRAM) device...
The application of high‐entropy oxide (HEO) has attracted significant attention in recent years owing to their unique structural characteristics, such as excellent electrochemical properties and long‐term cycling stability. However, the application of resistive random‐access memory (RRAM) has not been extensively studied, and the switching mechanism of HEO‐based RRAM has yet to be thoroughly investigated...