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A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate–source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate–source voltage of −0.6V under exposing to a 1% H 2 /air. While the applied gate–source voltage is fixed at 0V, the...
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