The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability...
There are several techniques for junction profiling available in literature, yet none of them are practically suitable for the accurate determination of the lateral junction steepness in TFET devices, which is the most important parameter influencing TFET performance. In this work, a simple physics-based compact analytical model has been developed for the junction steepness as a function of the doping...
We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher drive currents when compared to a lateral p-i-n junction TFET. The device principle and performances are studied by 2D numerical simulations. Output...
In this paper we study the sensitivity to parameter fluctuations for an optimized double-gate silicon Tunnel FET with a high-k gate dielectric. The impacts of the variability of the dielectric thickness, doping profile at the tunnel junction, silicon body thickness, alignment of the gate dielectric to the tunnel junction, device length, and band gap at the tunnel junction, on the device performance...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.