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We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries. Through quantum simulations based on the effective mass approximation (EMA), it is found that the fin EHBTFET is affected by the corner effects at the substrate-fin interface, due to reduced electrostatic control that causes a dramatic reduction of the ON current...
This paper overviews the physics and promised performance of electron hole bilayer TFETs (EHBTFET) as deep subthermal electronic switch for ultra-low voltage operation. We provide a first complete roadmap for optimizing its design for combined high performance and low leakage. Based on advanced quantum mechanical (QM) simulation methods, it is shown that the major issue with the EHBTFET is the wavefunction...
We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher drive currents when compared to a lateral p–i–n junction TFET. The device principle and performances are studied by 2D numerical simulations. Output...
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