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In this work we present structural, optical and electrical properties of GaN epilayers and AlGaN/GaN MOCVD heterostructures obtained on polar and non‐polar 10x10 mm2, 1 and 1.5 inch bulk ammonothermal GaN substrates. The results were obtained based not only on a single‐point measurement but also on mapping across the sample area. In contactless electroreflectance (CER) spectra CER resonances related...
m ‐plane oriented GaN substrates of size 6 x 8 mm have been obtained by ammonothermal method and used to growing GaN epilayers by metalorganic chemical vapor deposition. The structural and optical properties have been determined for both m ‐plane GaN substrates and GaN epilayers deposited on these substrates. Excellent structural quality of m ‐plane GaN substrates has been confirmed by very narrow...
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