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This work provides new results on the effects of the variation of Length of Diffusion (LOD), for active zones, the concentration of Germanium (Ge) and the impact of gate stack variation found on the performance and reliability in p-MOSFET transistors fabricated with a 14nm Ultra-Thin Body and Box (UTBB) FDSOI CMOS technology. Experiments show that changing the gate-to-STI distances on active (SA)...
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