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This paper reports the subthreshold characteristics of the SOI NMOS device considering the floating body effects. As verified by the experimentally measured data, as the channel length is scaled down from 1μm to 120nm, the subthreshold slope is steeper as a result of the dominance of the parasitic BJT in the thin film. For the channel length further scaled down to 60nm, its subthreshold behavior is...
The microstructure features and the IMC kinetics of Cu-Sn and Ni-Sn soldering reaction under space confinement are studied in the present study. Experimentally, Cu/Sn(10 μm)/Cu and Ni/Sn(10 μm)/Ni sandwich structures were prepared through a hot-press bonding. Sn with a thickness of 10 μm was chosen to simulate the joints in 3D IC packages employing a severe space confinement. Microstructure characterisations...
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