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A flex‐pass‐gate SRAM, that is, a fin‐type field effect transistor‐based (FinFET‐based) SRAM, is proposed to enhance the noise margin during both read and write operations. In its cell, the flip‐flop is composed of the usual three‐terminal (3T) FinFETs and the pass gates are composed of four‐terminal (4T) FinFETs. The 4T‐FinFETs enable the adoption of dynamic threshold‐voltage (Vt) control in the...
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