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Backend low-k time-dependent dielectric breakdown degrades reliability of circuits with Copper metallization. We present test data and link it to a methodology to evaluate chip lifetime due to low-k time-dependent dielectric breakdown. Other failure mechanisms can be integrated into our methodology. We analyze several layouts using our methodology and present the results to show that the methodology...
Backend time dependent dielectric breakdown (TDDB) degrades the reliability of circuits with copper interconnects. We use test data to develop a methodology to evaluate chip lifetimes, because of backend TDDB, from layout statistics. We identify features in a layout that are critical to backend reliability, present a model to incorporate those features in determining chip lifetimes, and study the...
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