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In this paper, a generic combiner design technique is developed for class-E outphasing transmitters. The design procedure starts with calculation of the combiner network parameters that guarantee high efficiency switch mode operation of the PAs in each branch. Recently developed continuous class-E modes theory is then utilized to create an additional degree of freedom for calculation of the combiner...
A 50 W CMOS-GaN class-E power amplifier in a package is presented. The class-E operated GaN HEMT power bar switches are driven by a high speed, high voltage CMOS power bar driver chip, implemented in a standard 65 nm process technology. The proposed switch-mode power amplifier demonstrates 76% line-up efficiency and 85% GaN drain efficiency at 2.14 GHz, including the losses of the matching network...
In this paper, we present two high voltage (up to 10V supply voltage), RF drivers in standard 65nm CMOS technology. The medium power (MP) driver operates from 0.5GHz to 4GHz with up to 9.6V peak-to-peak(pp) output voltage swing while driving a 3pF load capacitance. This driver consumes 0.75W dc power at 2GHz and achieves a duty-cycle control of 23% to 82% at 1GHz and 38% to 73% at 2GHz. The high power...
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