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This paper presents a novel dual-input Doherty-Outphasing Power Amplifier (DOPA) architecture that combines the efficiency advantages of Doherty and Outphasing amplifiers in power back-off (PBO). The proposed architecture, utilizes Doherty operation from peak power to −6dB PBO and mixed-mode outphasing from −6 to −14 dB PBO. A 2.14 GHz 112W GaN DOPA has been designed to demonstrate the concept, it...
A new load-insensitive class-E power amplifier mode is presented that that enables frequency reconfigurability by statically changing the switch duty-cycle without compromising its tuned efficiency performance. The technique is tested on a prototype CMOS-GaN class-E Chireix power amplifier designed for 1.8–2.2 GHz. The drain efficiency is more than 55% at 8dB back-off and more than 60% at 6dB back-off...
A 50 W CMOS-GaN class-E power amplifier in a package is presented. The class-E operated GaN HEMT power bar switches are driven by a high speed, high voltage CMOS power bar driver chip, implemented in a standard 65 nm process technology. The proposed switch-mode power amplifier demonstrates 76% line-up efficiency and 85% GaN drain efficiency at 2.14 GHz, including the losses of the matching network...
<?Pub Dtl?>This paper describes the design and implementation of a package-integrated Chireix outphasing RF switch-mode power amplifier (PA). The optimum loading conditions, based on class E, and the Chireix compensation elements are provided to the active devices by a dedicated low-loss bondwire-based transformer power combiner that enables a very small form factor and low cost. The realized...
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