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This paper presents the effect of back grinding on the mechanical properties of the active side of the multilayered low-k stacked die. Low-k stacked wafers were thinned to four different thicknesses of 500, 300, 150, and 75 by using a commercial grinding process. Nanoindentation and nanoscratch tests were performed on both the normal (no back grinding) and back grinded samples to analyze...
Though an understanding on the development of residual stresses in silicon device after chip level packaging processes has been investigated in previous studies, little is known about the development of stresses after wafer bumping process. In this paper, piezoresistive stress sensors were used to evaluate the stresses in device wafer after wafer bumping process, such as under bump metallization fabrication,...
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