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We report the fabrication and characterization of visible light-responsive titanium dioxide photocatalytic microspheres using a liquid-phase laser ablation method. The titanium oxide microspheres were characterized by scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The results indicate that the size of the titanium oxide microspheres is strongly dependent on laser irradiation...
We report the impact of the preheating temperature on the film quality and the TFT characteristics fabricated without the In incorporation. We found that both the surface roughness and the resistance of the film were greatly reduced for the preheating temperatures over 240°C. A very high transconductance of 13.6 mS/mm was obtained for a TFT (W/L = 50/20 µm) fabricated under the optimized preheating...
We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent...
IZO thin-film transistors fabricated using facing targets sputtering and a heat treatment at 400°C showed a very high transconductance as high as 91 mS/mm.
We investigated the effect of indium incorporation to ZnO thin films produced by sol-gel method. We characterized the ZnO thin films using AFM, XRD, and XPS and revealed that the indium atoms are incorporated in the ZnO films and improves the c-axis orientation. We confirmed the transistor operation on the glass substrate.
We fabricated flexible ZnO-based thin-film transistors (TFTs) at room temperature and characterized the TFTs. ZnO films were deposited on polyethylene naphthalate (PEN) substrates by pulsed laser deposition (PLD). We succeeded in fabricating ZnO TFTs on PEN substrates. A 4-µm-long gate device had a transconductance of 21.5 mS/mm and an on/off ratio of 1.4×107. The ZnO TFTs operated even at a bending...
We report on the fabrication and characterization of the self-switching nano-diodes using zinc oxide films grown on glass substrates for use as transparent rectifiers. Diode-like characteristics were clearly observed. The current clearly increased with increases in the channel length and the turn-on voltage sifted toward zero volt with decreasing the channel width. Overall, we found that the rectifying...
A heavily-doped InAs layer was grown as a reflection layer for enhancing THz radiation. Si δ-doped and uniformly-doped structures were studied. The electron mobility of Si δ-doped InAs was higher than that of uniformly-doped one. The intensity from samples with the reflection layer was stronger than that from that without the reflection layer. This shows that THz radiation intensity from InAs thin...
We studied how post-annealing process affects the transparent thin-film transistor (TFT) characteristics. Polycrystalline indium zinc oxide layer deposited by rf magnetron sputtering on an unheated glass substrate was used for the active channel layer. The post annealing was conducted for 30 minutes by varying ambient gases and temperature. At annealing temperature of 450 °C, the threshold voltage...
We report on the fabrication and characterization of flexible ZnO thin-film transistors (TFTs) using multilayer oxide buffer layers. ZnO-TFTs on polyethylene napthalate (PEN) substrates were fabricated by pulsed laser deposition (PLD) at room temperature (RT). ZnO films were characterized by Hall effect measurements. The electron mobility and the carrier density were 52.4 cm2/Vs and 3.2×1017 cm−3...
We report on the fabrication and characterization of antimonide-based composite-channel InAs/AlGaSb HFETs. Antimonide-based compound semiconductors such as those of InAs combined with AlxGa1−xSb are candidates for high-speed and low-power digital applications. InAs/AlGaSb HFETs utilizing high-k (HfO2) gate insulator were fabricated using a Pd/Au ohmic metallization. The HFETs exhibited transconductance,...
A systematic study of the intense terahertz (THz) emission from InAs thin films grown on a GaAs substrate was performed by varying the V/III ratio of the InAs. The emission intensity increased as the film thickness increased up to 1 μm and became stronger than that from a p-type InAs substrate for sample of lower V/III ratio. The mechanism of the enhanced THz emission is discussed, and a possible...
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