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We report on the fabrication and characterization of antimonide-based composite-channel InAs/AlGaSb HFETs. Antimonide-based compound semiconductors such as those of InAs combined with AlxGa1−xSb are candidates for high-speed and low-power digital applications. InAs/AlGaSb HFETs utilizing high-k (HfO2) gate insulator were fabricated using a Pd/Au ohmic metallization. The HFETs exhibited transconductance,...
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