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This paper describes a true 6F2 B4-Flash (Back Bias assisted Band-to-Band tunneling induced Hot Electron injection Flash) memory cell, which is one half of conventional NOR cell, for the first time as a floating gate NOR cell. 6F2 B4-Flash cells featuring a self-aligned STI and self aligned contact architectures have been fabricated by a 90nm process and was confirmed sufficient performance for NOR...
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