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The faceting and the shrinkage processes of ridge structure fabricated along [110] on GaAs (001) substrate with As 2 flux and As 4 flux were monitored by microprobe reflection high-energy electron diffraction/scanning electron microscopy (microprobe-RHEED/SEM) installed in the MBE chamber. It was found that the shrinkage of top size with As 4 flux was faster than that with...
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