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We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs (0.5%N) and GalnAs quantum well structures to compare their merits as laser gain media. The parameters describing the relations between peak gain and current provide only limited insight. From the analysis of absorption spectra we have determined the intrinsic properties of the structures, represented...
We quantify contributions to threshold-current in state-of-the-art 1.55 mum GaInNAsSb lasers and the affect of layer design and nitrogen level. Non-radiative current is independent of nitrogen content (3.0-3.3%) but linked to the GaNAs barriers.
We present the operation of electrically-injected 1528 nm GaInNAsSb vertical cavity surface emitting lasers grown on GaAs. Pulsed lasing at room temperature and continuous wave lasing at low temperatures are reported for the first time.
We investigated the temperature dependence of 1.55 mum GaInNAsSb/GaNAs QW lasers, with 3 different QW structures. T0 improves by reducing Auger recombination or carrier leakage into GaNAs barrier, but significant improvement of T0 remains challenging and will require a new barrier material.
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