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Suspended gate MOSFETs exist since last few decades. Resonant gate transistors were first demonstrated as a means of getting high Q devices [1]. The advantages of transistor based transduction as compared to the capacitive detection have also been demonstrated [2,3]. The behaviors of SGFETs have been studied using equivalent lumped parameter modeling methodology [4–7]. Numerical simulations involving...
The worldwide research in nanoelectronics is motivated by the fact that scaling of MOSFETs by conventional top down approach will not continue for ever due to fundamental limits imposed by physics even if it is delayed for some more years. The research community in this domain has largely become multidisciplinary trying to discover novel transistor structures built with novel materials so that semiconductor...
In this letter, we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of an HEMT and a FinFET, to obtain excellent performance and good off-state control. Followed by the description of the design, 3-D device simulation has been performed to predict the characteristics of the device. The device has been benchmarked against published state of the art HEMT...
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