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Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology. The outstanding low...
In this paper, due to the rapid growth of wireless communication systems, high frequency packages become very important and they require compactness, low cost and high performances even at frequency up to 60 GHz. Flip-chip assembly using organic substrate at very high frequency has become a cost competitive packaging method in semiconductor industries. The coefficients of thermal expansion (CTEs)...
The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of...
This paper reports on a flip-chip (FC)-based multichip module (MCM) for low phase-noise (PN) V-band frequency generation. A high-performance ×8 GaAs metamorphic high-electron mobility transistor monolithic microwave integrated circuit (MMIC) multiplier and a low PN 7-GHz GaAs InGaP heterojunction bipolar transistor (HBT) MMIC oscillator were used in the module. The microstrip MMICs were FC bonded...
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