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In this paper, we for the first time demonstrate the analog performance of a block-oxide structure in polycrystalline silicon thin-film transistor with source/drain-tie and additional poly-Si body (BO-SDT-APSB TFT) experimentally and compared with the similar device with zero block-oxide structure (SDT-APSB TFT). The block-oxide in BOSDT-SDT-APSB TFT is fabricated to reduce the drain-induced barrier...
A new planar-type body-connected FinFET structure produced by the isolation-last self-align process is demonstrated and characterized by using three-dimensional (3-D) numerical simulations. The new process step first defines the gate region and then the active region, thus it can achieve fully self-alignment undoubtedly. Besides, due to the isolation-last process (ILP), an additional body region (ABR)...
A new STI-type FinFET structure with its body region been connected is demonstrated and characterized by using three-dimensional (3-D) numerical simulations. From the simulation results, the STI-type FinFET shows that the short-channel effects (SCEs) and the off-state leakage current are proved to be reduced because the threshold voltage (VTH) roll-off and the drain-induced barrier lowering (DIBL)...
This study presents a new buried-gate vertical MOSFET (BGVMOS) with suppressed overlap capacitance and improved electrical characteristics due to its modified gate structure. According to the TCAD simulations, our proposed BGVMOS structure can gain reduced parasitic capacitances (27.11% Cgd and 37.53% Cgs at VDs = 1.0 V), improved drain saturation current, and free kink effect, in comparison to a...
In this paper, we propose a novel self-aligned silicon-on-insulator (SOI) MOSFET with Omega-shaped conductive layer and source/drain-tie (SA-OmegaCFET). Based on the TCAD 2D simulation results, we find that combining the applications of a nature Source/Drain (S/D) tie with a recessed S/D region can effectively improve the issue of self-heating effects, but without losing control of the short-channel...
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