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We investigate the electrical variability of polysilicon (poly-Si) channels with the single discrete dopant (SDD) and single grain boundary (SGB) for 3D NAND applications. A 3D simulation is used to investigate the effect of the SGB and the SDD on the threshold voltage (Vth) and subthreshold swing (S/S) variation where the SDD and SGB are randomly located in poly-Si channels. The SGB affects the entire...
In this paper, the volume trap densities Nt are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting Nt, the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing...
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